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SCTWA40N120G2V - Silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTWA40N120G2V Silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTWA40N120G2V

Datasheet Details

Part number	SCTWA40N120G2V
Manufacturer	STMicroelectronics
File Size	223.65 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2V Datasheet
Additional preview pages of the SCTWA40N120G2V datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |