SCTWA60N120G2-4 Key Features
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
| Part Number | Description |
|---|---|
| SCTWA60N120G2AG | Automotive-grade silicon carbide Power MOSFET |
| SCTWA60N12G2-4AG | Automotive-grade silicon carbide Power MOSFET |
| SCTWA35N65G2V4AG | Automotive-grade silicon carbide Power MOSFET |
| SCTWA35N65G2VAG | Automotive-grade silicon carbide Power MOSFET |
| SCTWA40N120G2AG | Automotive-grade silicon carbide Power MOSFET |