Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package
Features
Order code SCTWA60N12G2-4AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 52 A
HiP247-4
2 34 1
Drain(1, TAB)
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Gate(4) Driver source(3)
Power source(2)
ND1TPS2DS3G4
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed...