Full PDF Text Transcription for SGSP301 (Reference)
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SGSP301. For precise diagrams, and layout, please refer to the original PDF.
rrj * 7 W -» SGS-THOMSON RjflDeMlILligirmOD^i SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301 V DSS 100 V R DS(on) 1.4 Q *D 2.0 A • HIGH SPEED SWIT...
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TOR TYPE SGSP301 V DSS 100 V R DS(on) 1.4 Q *D 2.0 A • HIGH SPEED SWITCHING APPLICATIONS • GENERAL PURPOSE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli cations include general purpose low voltage swit ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po wer switching transistors.