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SGSP316 - N-CHANNEL POWER MOS TRANSISTORS

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Full PDF Text Transcription for SGSP316 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SGSP316. For precise diagrams, and layout, please refer to the original PDF.

~~ 'YL S~DG©OSO©-~1[H]JO~©MuOOS©O~DN©~ SGSP316 SGSP317 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss ROS(on) 10 SGSP316 250 V 1.20 5A SGSP317 200 V 0.750 6...

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STORS TYPE Voss ROS(on) 10 SGSP316 250 V 1.20 5A SGSP317 200 V 0.750 6A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • DC SWITCH N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, switching power supplies and as a DC switch.