STMicroelectronics SGSP301
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
- Max Operating Temp : 150°C
Source:
Octopart
APPLICATIONS
● GENERAL PURPOSEAPPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli cations include general purpose low voltage swit ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po wer switching transistors. TO-220 INTERNAL SCHEMATIC DIAGRAM CO o >
ABSOLUTE MAXIMUM RATINGS
Vdgr VGS *D●d
●d m n
●d l m ( * ) Ptot "●"stg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating junction temperature (*) Pulse width limited by safe operat...