SGSP301 Datasheet | STMicroelectronics

rrj - 7 W -» SGS-THOMSON Rjfl De Ml ILligirm OD^i - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301 V DSS 100 V R DS(on) 1.4 Q - D 2.0 A - HIGH SPEED SWITCHING APPLICATIONS - GENERAL PURPOSE APPLICATIONS - ULTRA FAST SWITCHING - EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: - GENERAL PURPOSE SWITCHING - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli­ cations include general purpose low voltage swit­ ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po­ wer switching transistors. TO-220 INTERNAL SCHEMATIC DIAGRAM CO o > ABSOLUTE MAXIMUM RATINGS Vdgr VGS - D - d - d m n - d l m ( - ) Ptot "- "stg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating junction temperature (- ) Pulse width limited by safe operating area June 1988 100 100 ±20 2.0 1 .2 6 6 18 0.144 - 6 5 to 150 150 V V V A A A A W W /°C °C...