SGSP319
SGSP319 is N-CHANNEL POWER MOS TRANSISTORS manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP319
Voss 500 V
ROS(on) 3.8 0
10 2.8 A
- HIGH SPEED SWITCHING APPLICATIONS
- 500V
- HIGH VOLTAGE FOR SMPS
- ULTRA FAST SWITCHING
- EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS:
- SWITCHING POWER SUPPLIES
- channel enhancement mode POWER Ma S field effect transistor. Easy drive and very fast switching times make this POWER Ma S transistor ideal for high speed switching applications. Typical applications include switching power supplies, battery chargers, motor speed control and solenoid drivers.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 KO)
Gate-source voltage
Drain current (cont.) at Tc = 25°C
Drain current (cont.) at Tc= 100°C
Dr~in current (pulsed)
Drain inductive current, clamped
Total dissipation at Tc <25°C
Derating factor
T stg
Storage temperature
Tj
Max. operating junction temperature
(e) Pulse width limited by safe operating area
June 1988
500 500 ±20 2.8 1.7 11 11 75 0.6 -65 to 150 150
V V V A A A A W W/o C °C °C
1/5 475
THERMAL DATA
Rthj _case Thermal resistance junction-case
Maximum lead temperature for soldering purpose...
