STMicroelectronics SGSP319
N-CHANNEL POWER MOS TRANSISTORS
APPLICATIONS
● 500V - HIGH VOLTAGE FOR SMPS● ULTRA FAST SWITCHING
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING POWER SUPPLIES N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include switching power supplies, battery chargers, motor speed control and solenoid drivers. TO-220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Dr~in current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 5 500 500 ±20 2.8 1.7 11 11 75 0.6 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 475 SGSP319 THERMAL DATA Rth...