SGSP311
SGSP311 is N-CHANNEL POWER MOS TRANSISTORS manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP311
Voss 100 V
Ros(on) 0.30
10 11 A
- HIGH SPEED SWITCHING APPLICATIONS
- 100V FOR DCIDC CONVERTERS
- RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST)
- - ULTRA FAST SWITCHING
- EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS:
- SWITCHING MODE POWER SUPPLIES
- STEPPER MOTOR CONTROL
- channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical uses include DC/DC converters, stepper motors and solenoid drives.
,
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Vos VOGR V GS
10 10
10M (e) Ptot
Tstg Tj
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature
(e) Pulse width limited by safe operating area
- Introduced in 1989 week 1
June 1988
100 100 ±20 11
7 30 75 0.6 -65 to 150 150
V V V A A A W W/o C °C °C
1/5 463
THERMAL DATA
Rthj _case Thermal resistance junction-case
Maximum lead temperature for soldering purpose max
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise...
