STMicroelectronics SGSP311
N-CHANNEL POWER MOS TRANSISTORS
| Part No. | SGSP311 |
|---|---|
| Datasheet | SGSP311 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● 100V FOR DCIDC CONVERTERS● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
●
● ULTRA FAST SWITCHING
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING MODE POWER SUPPLIES
● STEPPER MOTOR CONTROL N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical uses include DC/DC converters, stepper motors and solenoid drives. , TO-220 INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR V GS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area● Introduced in 1989 week 1 June 1988 100 100 ±20 11 7 30 75 0.6 -65 to 1...
