STMicroelectronics SGSP317
N-CHANNEL POWER MOS TRANSISTORS
| Part No. | SGSP317 |
|---|---|
| Datasheet | SGSP317 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● ULTRA FAST SWITCHING● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
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● EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING POWER SUPPLIES
● DC SWITCH N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, switching power supplies and as a DC switch. TO-220 INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cant.) at Tc =25°C Drain current (cant.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Tstg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area● Introduced in 1988 week 44 June 1988 SGSP316 SGSP317 250 200 V 250 200 V ±20 V 5 6 A 3.1 3.7 A 20 24 A 75 W 0.6 W/oC -65 to 150 °C 150 °C 1/...
