SGSP317 Datasheet | STMicroelectronics

~~ 'YL S~DG©OSO©-~1[H]JO~©Mu OOS©O~DN©~ SGSP316 SGSP317 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss ROS(on) SGSP316 250 V 5A SGSP317 200 V 6A - HIGH SPEED SWITCHING APPLICATIONS - ULTRA FAST SWITCHING - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: - SWITCHING POWER SUPPLIES - DC SWITCH - channel enhancement mode POWER Ma S field effect transistors. Easy drive and very fast switching times make these POWER Ma S transistors ideal for high speed switching applications. Typical uses are in telemunications, switching power supplies and as a DC switch. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cant.) at Tc =25°C Drain current (cant.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Tstg Storage...