STAP57100 Description
The STAP57100 is a mon source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband performance operating in mon source mode at 28 V. Device summary Order code STAP57100 Package STAP2 Branding STAP57100 April 2009 Rev 1 1/8 .st.
STAP57100 Key Features
- Excellent thermal stability mon source configuration push-pull POUT = 100 W with 14 dB gain @ 860 MHz ST advanced PowerS
- STAP package Load mismatch 10:1 all phases In pliance with the 2002/95/EC european directive