STAP57100 transistor equivalent, rf power transistor.
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Excellent thermal stability Common source configuration push-pull POUT = 100 W with 14 dB gain @ 860 MHz ST advanced PowerSO-10RF - S.
at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband performance operating in common sour.
The STAP57100 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The STAP57100 is designed for high gain and broadband per.
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