Datasheet Summary
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High voltage fast-switching NPN power transistor
General Features
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C Large RBSOA In pliance with the 2002/93/EC European Directive
D2PAK (T0-263)
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Internal schematic diagram
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability....