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STB33N60DM2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series.

They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link STB33N60DM2 STP33N60DM2 STW33N60DM2 DS10564 - Rev 3 - October 2020 For further information contact your local STMicroelectronics sales office.

Overview

STB33N60DM2, STP33N60DM2, STW33N60DM2 Datasheet N-channel 600 V, 110 mΩ typ.

Key Features

  • Order code VDS @ TJmax. STB33N60DM2 STP33N60DM2 650 V STW33N60DM2.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected RDS(on) max. 130 mΩ ID 24 A.