Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, inpu.

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecove.

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) pe.

STB33N60DM2

STB33N60M2

STB33N65M2

STB300NH02L

STB30120C

STB30150C

STB3015L

STB3020L

STB3055L2

STB30N10

STB30N65DM6AG

STB30N65M2AG

STB30N65M5