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STB33N60DM6 - N-channel MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

Features

  • Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 25 A.

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Datasheet preview – STB33N60DM6

Datasheet Details

Part number STB33N60DM6
Manufacturer STMicroelectronics
File Size 617.56 KB
Description N-channel MOSFET
Datasheet download datasheet STB33N60DM6 Datasheet
Additional preview pages of the STB33N60DM6 datasheet.

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Full PDF Text Transcription

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STB33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 25 A Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.
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