STB33N60DM6 Datasheet - STMicroelectronics

N-channel MOSFET

STB33N60DM6 Features

* Order code VDS RDS(on) max. STB33N60DM6 600 V 128 mΩ

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener

STB33N60DM6 General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be.

STB33N60DM6 Datasheet (617.56 KB)

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Datasheet Details

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STB33N60DM6

Manufacturer:

STMicroelectronics ↗

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617.56 KB

Description:

N-channel mosfet.
STB33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1.

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STB33N60DM6 Features

STB33N60DM6 General Description

Datasheet Details

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