STB33N60DM6
STB33N60DM6 is N-channel MOSFET manufactured by STMicroelectronics.
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a D2PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
RDS(on) max.
600 V
128 mΩ
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
ID 25 A
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr)...
