STB33N60DM2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STB33N60DM2 Features

* Order code VDS @ TJmax. STB33N60DM2 STP33N60DM2 650 V STW33N60DM2

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected RDS(o

STB33N60DM2 General Description

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phas.

STB33N60DM2 Datasheet (554.67 KB)

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Datasheet Details

Part number:

STB33N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

554.67 KB

Description:

N-channel power mosfet.
STB33N60DM2, STP33N60DM2, STW33N60DM2 Datasheet N-channel 600 V, 110 mΩ typ., 24 A MDmesh DM2 Power MOSFET in D²PAK, TO‑220 and TO‑247 packages TAB .

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STB33N60DM2 Features

STB33N60DM2 General Description

Datasheet Details

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Description:

STB33N60DM2 Distributor