STB33N60M2 Datasheet - STMicroelectronics

STB33N60M2 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui.

STB33N60M2 Features

* TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* MDmesh™ II technology

* Low gate input resist

STB33N60M2-STMicroelectronics.pdf