STB33N60M2 - N-CHANNEL POWER MOSFET

STMicroelectronics

Datasheet Details

Part number	STB33N60M2
Manufacturer	STMicroelectronics
File Size	1.00 MB
Description	N-CHANNEL POWER MOSFET
Datasheet	STB33N60M2-STMicroelectronics.pdf

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A.
Extremely low gate charge.
Lower RDS(on) x area vs previous generation.
MDmesh™ II technology.
Low gate input resistance.
100% avalanche tested.
Zener-protected.

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Published: Jan 23, 2019 |