STB33N60M2 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

STB33N60M2 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STB33N60M2
Manufacturer	STMicroelectronics
File Size	1.00 MB
Description	N-CHANNEL POWER MOSFET
Download	STB33N60M2 Download (PDF)

General Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package Datasheet - production.

Key Features

TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A.
Extremely low gate charge.
Lower RDS(on) x area vs previous generation.
MDmesh™ II technology.
Low gate input resistance.
100% avalanche tested.
Zener-protected.

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