STB6NM60N mosfet equivalent, n-channel power mosfet.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB6NM60N
t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N
650 V 650 V 650 V 650 V 650 V
< 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < .
ct(sDescription
duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power .
duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on-
resistance and gate c.
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