Datasheet Summary
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Hybrid emitter switched bipolar transistor ESBT® 1500V
- 8A
- 0.075 W
Preliminary Data
General Features
Table 1.
VCS(ON) 0.6V
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- General Features
IC 8A RCS(ON) 0.075Ω
Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1500 V Very low CISS driven by RG = 47 Ω In pliance with the 2002/93/EC European Directive
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TO247-4L HV
Description
The STC08DE150HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology. The STC08DE150HV is designed for use in aux flyback smps for any three phase...