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STGB30H65DFB2 Datasheet, STMicroelectronics

STGB30H65DFB2 igbt equivalent, high-speed hb2 series igbt.

STGB30H65DFB2 Avg. rating / M : 1.0 rating-13

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STGB30H65DFB2 Datasheet

Features and benefits


* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail c.

Application


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* NG1E3C2T Welding Power factor correction UPS Solar inverters Chargers Description The n.

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