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STGB6NC60HDT4 - N-Channel 600V 7A IGBT

General Description

Using the latest high-voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs characterized by an outstanding performance.

Key Features

  • Low VCE(sat).
  • Low CRES/CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.
  • High-frequency operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD Datasheet N-channel 600 V, 7 A, very fast IGBT TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Low VCE(sat) • Low CRES/CIES ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • High-frequency operation Applications • High frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drives Description Using the latest high-voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs characterized by an outstanding performance.