Download STGW60H60DLFB Datasheet PDF
STGW60H60DLFB datasheet preview
STGW60H60DLFB page 2
Page 2
STGW60H60DLFB page 3
Page 3

STGW60H60DLFB Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ IC = 60 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Low VF soft recovery co-packaged diode
  • Lead free package

Related STMicroelectronics Datasheets

Part Number Description
STGW60H65DF field stop trench gate IGBT
STGW60H65DFB Trench gate field-stop IGBT
STGW60H65DFB-4 IGBT
STGW60H65DRF field stop trench gate IGBT
STGW60H65F 650 V field stop trench gate IGBT

STGW60H60DLFB Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution.