STGW60H60DLFB Datasheet - STMicroelectronics

Trench gate field-stop IGBT

STGW60H60DLFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Low VF soft recovery

STGW60H60DLFB General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a.

STGW60H60DLFB Datasheet (828.95 KB)

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Datasheet Details

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STGW60H60DLFB

Manufacturer:

STMicroelectronics ↗

File Size:

828.95 KB

Description:

Trench gate field-stop igbt.
STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1.

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STGW60H60DLFB Trench gate field-stop IGBT STMicroelectronics

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STGW60H60DLFB Features

STGW60H60DLFB General Description

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