STGW60H65FB igbt equivalent, trench gate field-stop igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ.) @ IC = 60 A
* Tight param.
* Photovoltaic inverters
* High frequency converters
Description
These are IGBT devices developed using an advan.
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the effici.
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