STGW60V60F Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Part: STGW60V60F
- Manufacturer: STMicroelectronics (official site)
- Size: 419.69 KB
Related STMicroelectronics (official site) Datasheets
| Part Number | Description |
|---|---|
| STGW60V60DF | 650V 60A IGBT |
| STGW60H60DLFB | Trench gate field-stop IGBT |
| STGW60H65DF | field stop trench gate IGBT |
| STGW60H65DFB | Trench gate field-stop IGBT |
| STGW60H65DFB-4 | IGBT |
STGW60V60F Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.