STGW60V60F Datasheet - STMicroelectronics

Trench gate field-stop IGBT

STGW60V60F Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inverters

* Uninterruptible power supply

* Welding

STGW60V60F General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posi.

STGW60V60F Datasheet (419.69 KB)

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Datasheet Details

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STGW60V60F

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STMicroelectronics ↗

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419.69 KB

Description:

Trench gate field-stop igbt.
STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: .

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STGW60V60F Trench gate field-stop IGBT STMicroelectronics

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STGW60V60F Features

STGW60V60F General Description

Datasheet Details

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