STMicroelectronics STGW60H60DLFB
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.STGW60H60DLFB Specifications
- Package : TO-247-3
- Mount Type : Through Hole
- Max Collector Current : 80A
- Forward Current : 60A
- Terminals : 3
- Collector Emitter Voltage : 600V
- Collector Emitter Saturation Voltage : 2V
- Forward Voltage : 1.8V
- Max Power Dissipation : 375W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STGW60H60DLFB |
|---|---|
| Datasheet | STGW60H60DLFB Download |
| Manufacturer |  STMicroelectronics |
| Description | Trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● VCE(sat) = 1.6 V (typ.) @ IC = 60 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Low VF soft recovery co-packaged diode
● Lead free package Figure 1. Internal schematic diagram C (2 or TAB)
APPLICATIONS
● Induction heating● Microwave oven
● Resonant converters G (1) E (3)
DESCRIPTION
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution
