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STGW60H60DLFB - Trench gate field-stop IGBT

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STMicroelectronics

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STGW60H60DLFB Trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGW60H60DLFB

Datasheet Details

Part number	STGW60H60DLFB
Manufacturer	STMicroelectronics
File Size	828.95 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H60DLFB Datasheet
Additional preview pages of the STGW60H60DLFB datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Low VF soft recovery co-packaged diode.
Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

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Published: Sep 6, 2017 |