STGW60H60DLFB Datasheet Trench Gate Field-stop IGBT

Manufacturer: STMicroelectronics

Overview: STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2.

Datasheet Details

Part number	STGW60H60DLFB
Manufacturer	STMicroelectronics
File Size	828.95 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H60DLFB-STMicroelectronics.pdf

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution

Key Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Low VF soft recovery co-packaged diode.
Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

STGW60H60DLFB Distributor

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