STGW60V60DF Datasheet | STMicroelectronics

STGW60V60DF, STGWA60V60DF Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T Features - Maximum junction temperature: TJ = 175 °C - Tail-less switching off - VCE(sat) = 1.85 V (typ.) @ IC = 60 A - Tight parameter distribution - Safe paralleling - Low thermal resistance - Very fast soft recovery antiparallel diode Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - Very high frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGW60V60DF STGWA60V60DF Product summary Order...