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STGW60V60DF - 650V 60A IGBT

This page provides the datasheet information for the STGW60V60DF, a member of the STGW60V60DF-1 650V 60A IGBT family.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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STGW60V60DF, STGWA60V60DF Datasheet Trench gate field-stop 650 V, 60 A high speed V series IGBT in a TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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