STGW60V60F Datasheet | STMicroelectronics

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed in a TO-247 package - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features - Maximum junction temperature: TJ = 175 °C - Tail-less switching off - VCE(sat) = 1.85 V (typ.) @ IC = 60 A - Tight parameters distribution - Safe paralleling - Low thermal resistance Applications - Photovoltaic inverters - Uninterruptible power supply - Welding - Power factor correction - Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW60V60F Table 1:...