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STGW60V60F Datasheet Trench Gate Field-stop IGBT

Manufacturer: STMicroelectronics

Overview: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic.

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

STGW60V60F Distributor