STGW75M65DF2 Datasheet, STMicroelectronics

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.65 V (typ.) @ IC = 75 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resista.

* Motor control
* UPS
* PFC Description These devices are IGBTs developed using an advanced proprietary tren.

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and sho.