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STGW80H65DFB-4 - IGBT

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STMicroelectronics

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STGW80H65DFB-4 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGW80H65DFB-4

Datasheet Details

Part number	STGW80H65DFB-4
Manufacturer	STMicroelectronics
File Size	291.44 KB
Description	IGBT
Datasheet	STGW80H65DFB-4 Datasheet
Additional preview pages of the STGW80H65DFB-4 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelvin pin G(4).

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Published: Sep 3, 2023 |