STGW80H65DFB-4 Datasheet, STMicroelectronics

STGW80H65DFB-4 igbt equivalent, igbt.

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Features and benefits

* VCE(sat) = 1.6 V (typ.) @ IC = 80 A
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Tight param.

Application

K(3)
* Photovoltaic inverters
* High frequency converters E(2) NG4K3E2C1_TAB Description This device is a.

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