Datasheet Details
| Part number | STGW80H65DFB |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 663.72 KB |
| Description | IGBT |
| Datasheet | STGW80H65DFB-STMicroelectronics.pdf |
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Overview: STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2.
| Part number | STGW80H65DFB |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 663.72 KB |
| Description | IGBT |
| Datasheet | STGW80H65DFB-STMicroelectronics.pdf |
|
|
|
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Compare STGW80H65DFB distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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