STGW80H65DFB-4 Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGW80H65DFB-4 Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO247-4 2 34 1 C(1,.

Datasheet Details

Part number	STGW80H65DFB-4
Manufacturer	STMicroelectronics
File Size	291.44 KB
Description	IGBT
Datasheet	STGW80H65DFB-4-STMicroelectronics.pdf

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal.

Key Features

VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelvin pin G(4).

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