STGW80H65DFB-4
STGW80H65DFB-4 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
TO247-4
2 34 1
C(1, TAB)
Features
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Excellent switching performance thanks to the extra driving kelvin pin
G(4)
Applications
K(3)
- Photovoltaic inverters
- High frequency converters
E(2)
NG4K3E2C1_TAB
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGW80H65DFB-4
Product summary
Order code
Marking
G80H65DFB
Package
TO247-4...
