STMicroelectronics STGW80V60DF
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.| Part No. | STGW80V60DF |
|---|---|
| Datasheet | STGW80V60DF Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.85 V (typ.) @ IC = 80 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters G (1) E (3)
DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW80V60DF STGWT80V60DF Table 1. Device summary Marking Package GW80V60DF GWT80V60DF TO-247 TO-3P Packaging Tube Tube January 2014 This is information on a product in full production. DocID024362 Rev 2 1/18 18 Contents Contents STGW80V60DF, STGWT80V60DF 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
