STGW80H65FB - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW80H65FB
Manufacturer	STMicroelectronics
File Size	1.44 MB
Description	IGBT
Datasheet	STGW80H65FB Datasheet
Additional preview pages of the STGW80H65FB datasheet.

Product details

Description

G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.Order code STGW80H65FB STGWA80H65FB STGWT80H65FB Table

Features

TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P.
Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.

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Published: Apr 14, 2020 |