STGW80H65FB
STGW80H65FB is IGBT manufactured by STMicroelectronics.
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
- production data
Features
3 2 1
TO-247 TO-247 long leads
3 2 1
TO-3P
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
Applications
Figure 1. Internal schematic diagram
C (2 or TAB)
- Photovoltaic inverters
- High frequency converters
Description
G (1)
E (3)
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGW80H65FB STGWA80H65FB STGWT80H65FB
Table 1. Device summary
Marking
Package
GW80H65FB
TO-247...
