STMicroelectronics STGW80H65DFB
650V 80A high speed IGBT
STGW80H65DFB Specifications
- Package : TO-247
- Mount Type : Through Hole
- Max Collector Current : 120A
- Collector Emitter Voltage : 650V
- Collector Emitter Saturation Voltage : 1.6V
- Reverse Recovery Time : 85ns
- Max Power Dissipation : 469W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STGW80H65DFB |
|---|---|
| Datasheet | STGW80H65DFB Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 80A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
● Tight parameter distribution
● Safe paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● High frequency converters
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW80H65DFB STGWT80H65DFB Product summary Order code STGW80H65DFB Marking GW80H65DFB Package TO-247 Packing Tube Order code STGWT80H65DFB Marking GWT80H65DFB Package TO-3P Packing Tube DS9536 - Rev 9 - June 2019 For further information contact your local STMicroelectronics sales office.
