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STGW80H65DFB Datasheet, STMicroelectronics

STGW80H65DFB igbt equivalent, igbt.

STGW80H65DFB Avg. rating / M : 1.0 rating-113

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STGW80H65DFB Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC .

Application


* Photovoltaic inverters
* High frequency converters Description These devices are IGBTs developed using an adv.

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