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STGWA30H65DFB2 Datasheet, STMicroelectronics

STGWA30H65DFB2 igbt equivalent, igbt.

STGWA30H65DFB2 Avg. rating / M : 1.0 rating-15

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STGWA30H65DFB2 Datasheet

Features and benefits

C(2, TAB)
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Mini.

Application

G(1) E(3)
* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers NG1E3C2T Descript.

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STGWA30H65DFB2 Page 1 STGWA30H65DFB2 Page 2 STGWA30H65DFB2 Page 3

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