STGWA30H65DFB2 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGWA30H65DFB2
Manufacturer	STMicroelectronics
File Size	508.96 KB
Description	IGBT
Datasheet	STGWA30H65DFB2 Datasheet
Additional preview pages of the STGWA30H65DFB2 datasheet.

Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Features

C(2, TAB).
Maximum junction temperature : TJ = 175 °C.
Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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Published: Apr 26, 2020 |