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STGWA30M65DF2 - Trench gate field-stop IGBT

This page provides the datasheet information for the STGWA30M65DF2, a member of the STGW30M65DF2 Trench gate field-stop IGBT family.

Product Overview

STMicroelectronics

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STGWA30M65DF2 Trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGWA30M65DF2

Datasheet Details

Part number	STGWA30M65DF2
Manufacturer	STMicroelectronics
File Size	562.55 KB
Description	Trench gate field-stop IGBT
Datasheet	STGWA30M65DF2 Datasheet
Additional preview pages of the STGWA30M65DF2 datasheet.

STGWA30M65DF2 Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of minimum short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 50 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Mar 22, 2016 |