Download the STGWA30M65DF2 datasheet PDF.
This datasheet also covers the STGW30M65DF2 variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.
General Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
Note: The manufacturer provides a single datasheet file (STGW30M65DF2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STGWA30M65DF2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STGWA30M65DF2. For precise diagrams, and layout, please refer to the original PDF.
STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of...
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roduction data Figure 1: Internal schematic diagram Features 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are esse
STGWA30M65DF2 Datasheet
