STGWA30M65DF2 Datasheet | STMicroelectronics

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss - production data Figure 1: Internal schematic diagram Features - 6 µs of minimum short-circuit withstand time - VCE(sat) = 1.55 V (typ.) @ IC = 50 A - Tight parameters distribution - Safer paralleling - Low thermal resistance - Soft and very fast recovery antiparallel diode Applications - Motor control - UPS - PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW30M65DF2 STGWA30M65DF2 Table 1: Device summary Marking Package G30M65DF2 TO-247 G30M65DF2 TO-247 long leads Packaging Tube Tube December 2015 Doc ID027768 Rev 3 This is information on a product in full production. 1/19...