STGWA30N120KD Datasheet | STMicroelectronics

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features - Low on-losses - High current capability - Low gate charge - Short circuit withstand time 10 µs - IGBT co-packaged with Ultrafast free-wheeling diode Applications - Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Markings STGW30N120KD GW30N120KD GWA30N120KD Package TO-247 TO-247 long leads February 2012 Doc ID 14394 Rev 5 Packaging Tube Tube 1/15 .st. Contents Contents STGW30N120KD,...