STGWA30H65FB
STGWA30H65FB is IGBT manufactured by STMicroelectronics.
Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package
- production data
Figure 1: Internal schematic diagram
Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V(typ) @ IC = 30 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
Applications
- Photovoltaic inverters
- High-frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGWA30H65FB
Table 1: Device summary
Marking
Package
GWA30H65FB
TO-247 long leads
Packing Tube
May 2017
Doc ID030595 Rev 1
This is information on a product in full production.
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Contents
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