STGWA35IH135DF2 Overview
The newest IGBT 1350 V IH2 series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft mutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
STGWA35IH135DF2 Key Features
- Designed for soft-mutation
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.7 V (typ.) at IC = 30 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Very low drop and soft recovery co-packaged diode
- Positive VCE(sat) temperature coefficient