Datasheet4U Logo Datasheet4U.com

STGWA30H65DFB2 - IGBT

General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Key Features

  • C(2, TAB).
  • Maximum junction temperature : TJ = 175 °C.
  • Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A.
  • Very fast and soft recovery co-packaged diode.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.

📥 Download Datasheet

Full PDF Text Transcription for STGWA30H65DFB2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STGWA30H65DFB2. For precise diagrams, and layout, please refer to the original PDF.

STGWA30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package Features C(2, TAB) • Maximum junction temperature ...

View more extracted text
long leads package Features C(2, TAB) • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications G(1) E(3) • Welding • Power factor correction • UPS • Solar inverters • Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

More Datasheets from STMicroelectronics

Part Number Description
STGWA30H65FB IGBT
STGWA30H60DFB 30A high speed HB series IGBT
STGWA30M65DF2 Trench gate field-stop IGBT
STGWA30N120KD short circuit rugged IGBT
STGWA35IH135DF2 IGBT
STGWA100H65DFB2 IGBT
STGWA15H120DF2 IGBT
STGWA15M120DF3 Trench gate field-stop IGBT
STGWA19NC60HD IGBT
STGWA20HP65FB2 IGBT