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STGWA40HP65FB2 - high-speed HB2 series IGBT

General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Key Features

  • Maximum junction temperature : TJ = 175 °C.
  • Low VCE(sat) = 1.55 V(typ. ) @ IC = 40 A.
  • Co-packaged protection diode.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.

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STGWA40HP65FB2 Datasheet Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package G(1) C(2) Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power factor correction E(3) G1E3C2D Product status link STGWA40HP65FB2 Product summary Order code STGWA40HP65FB2 Marking G40HP65FB2 Package TO-247 long leads Packing Tube Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.