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STGWT40HP65FB - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
  • Tight parameter distribution.
  • Co-packed diode for protection.
  • Safe paralleling.
  • Low thermal resistance.

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STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB TO-3P 3 2 1 Figure 1: Internal schematic diagram Features  Maximum junction temperature: TJ = 175 °C  Minimized tail current  VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Co-packed diode for protection  Safe paralleling  Low thermal resistance Applications  Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
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