STGWT40HP65FB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* Minimized tail current
* VCE(sat) = 1.6 V (typ.) @ IC = 40 A
* Tight parameter distribution
* Co-packed .
* Power factor corrector (PFC)
Description
This device is an IGBT developed using an advanced proprietary trench gat.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.
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