STGWT40V60DF igbt equivalent, trench gate field-stop igbt.
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.8 V (typ.) @ IC = 40 A
* Tight parameters distribution
* Safe par.
* Welding
* Power factor correction
* UPS
* Solar inverters
* Chargers
E(3)
NG1E3C2T Description
Th.
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of.
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