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STGWT40V60DF Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWT40V60DF datasheet PDF. This datasheet also includes the STGW40V60DF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW40V60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 C(2, TAB).

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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