STGWT60V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Part: STGWT60V60DF
- Manufacturer: STMicroelectronics (official site)
- Size: 1.00 MB
Related STMicroelectronics (official site) Datasheets
| Part Number | Description |
|---|---|
| STGWT60H60DLFB | Trench gate field-stop IGBT |
| STGWT60H65DFB | Trench gate field-stop IGBT |
| STGWT60H65F | 650 V field stop trench gate IGBT |
| STGWT60H65FB | Trench gate field-stop IGBT |
| STGWT15H60F | Trench gate field-stop IGBT |
STGWT60V60DF Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature.