STH240N75F3-6 Description
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB H2PAK-2 7 1 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table.
STH240N75F3-6 Key Features
- Conduction losses reduced
- Low profile, very low parasitic inductance