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STH260N4LF7-6 - N-channel Power MOSFET

Download the STH260N4LF7-6 datasheet PDF. This datasheet also covers the STH260N4LF7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • 7$% 7$% uct(s)  d te Pro+3$.    +3$.  bsoleFigure 1. Internal schematic diagram - O' 7$%  te Product(s).
  •    Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH260N4LF7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH260N4LF7-2 N-channel Power MOSFET
STH265N6F6-2AG N-CHANNEL POWER MOSFET
STH265N6F6-6AG N-CHANNEL POWER MOSFET
STH200N10WF7-2 N-channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH260N4LF7-2, STH260N4LF7-6 N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet − preliminary data Features 7$% 7$% uct(s)  d te Pro+3$.   +3$. bsoleFigure 1. Internal schematic diagram - O' 7$%  te Product(s)*   Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.