STH290N4F6-6AG Datasheet | STMicroelectronics

STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STrip FET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages - production data Figure 1: Internal schematic diagram Features Order code STH290N4F6-2AG 40 V RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W - Designed for automotive applications and AEC-Q101 qualified - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the STrip FET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STH290N4F6-2AG STH290N4F6-6AG Table 1: Device summary Marking Package 290N4F6 H²PAK-2 H²PAK-6 Packing Tape and Reel July 2015 Doc ID027971 Rev 1 This is information on a product in full...