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STH290N4F6-6AG - N-channel Power MOSFET

Download the STH290N4F6-6AG datasheet PDF. This datasheet also covers the STH290N4F6-2AG variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH290N4F6-2AG-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STH290N4F6-2AG N-channel Power MOSFET
STH200N10WF7-2 N-channel Power MOSFET
STH22N95K5-2AG Automotive-grade N-channel Power MOSFET
STH240N10F7-2 N-CHANNEL POWER MOSFET
STH240N10F7-6 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.