Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25.

Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Po.

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. I.

STI30NM60ND

STI30NM50N

STI30N65M5

STI300N4F6

STI3220

STI32N65M5

STI33N60M2

STI33N65M2

STI3408

STI3408B

STI3470

STI3472

STI34N65M5