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STI300N4F6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order code STI300N4F6 VDS 40 V RDS(on) max ID 2.2 mΩ 160 A(1) 1. Limited by wire bonding.
  • Standard level VGS(th).
  • 100% avalanche rated.

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STI300N4F6 N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package Datasheet — production data Features Order code STI300N4F6 VDS 40 V RDS(on) max ID 2.2 mΩ 160 A(1) 1. Limited by wire bonding ■ Standard level VGS(th) ■ 100% avalanche rated Applications ■ Automotive switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 123 I²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1.