STI300N4F6 Datasheet | STMicroelectronics

N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package - production data Features Order code STI300N4F6 VDS 40 V RDS(on) max 2.2 mΩ 160 A(1) 1. Limited by wire bonding - Standard level VGS(th) - 100% avalanche rated Applications - Automotive switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. I²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order code STI300N4F6 Marking 300N4F6 Package...