STI30NM50N Description
PD s b O t e l o Table 1. Order codes STB30NM50N STI30NM50N STF30NM50N STP30NM50N STW30NM50N F w C This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest onresistance and gate charge.
STI30NM50N Key Features
- 100% avalanche tested
- Switching