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STI30NM60N - N-channel MOSFET

General Description

This series of devices is designed using the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge.

Key Features

  • Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DataSheet.in STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W 3 1 2 1 3 2 3 1 3 12 D²PAK 2 1 3 I²PAK TO-247 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology.