STI30NM60N Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STI30NM60N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Figure 1